类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IRLHS6276TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-VQFN | 6 | SILICON | 10 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 45MOhm | Matte Tin (Sn) | 1.5W | 260 | 30 | IRLHS6276PBF | Dual | 增强型MOSFET | 1.5W | DRAIN | 4.4 ns | 2 N-Channel (Dual) | SWITCHING | 45m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 310pF @ 10V | 3.1nC @ 4.5V | 9.3ns | 20V | 4.9 ns | 4.5A | 12V | 3.4A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP3056LSD-13 | Diodes Incorporated | 数据表 | 2223 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 26.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.5W | 鸥翼 | 260 | 40 | DMP3056LSD | 8 | 增强型MOSFET | 2.5W | 6.4 ns | 2 P-Channel (Dual) | SWITCHING | 45m Ω @ 6A, 10V | 2.1V @ 250μA | 722pF @ 25V | 13.7nC @ 10V | 5.3ns | 30V | 14.7 ns | 6.9A | 20V | 0.045Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5.3mm | 4.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | BSG0811NDATMA1 | Infineon Technologies | 数据表 | 15 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 19A 41A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 7 | 2.5W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | 2.5W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 3m Ω @ 20A, 10V | 2V @ 250μA | 无卤素 | 1100pF @ 12V | 8.4nC @ 4.5V | 41A | 25V | 19A | 0.004Ohm | 160A | 30 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2028UFDH-7 | Diodes Incorporated | 数据表 | 2700 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 561 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.1W | 260 | 40 | 2 | 增强型MOSFET | 53 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 20m Ω @ 4A, 10V | 1V @ 250μA | 151pF @ 10V | 8.5nC @ 4.5V | 77ns | 20V | 234 ns | 6.8A | 12V | 0.036Ohm | 20V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800μm | 3.05mm | 3.05mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
FDC8602 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 35 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 5.4 ns | -55°C~150°C TJ | Cut Tape (CT) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | ULTRA-LOW RESISTANCE | 690mW | 鸥翼 | Dual | 增强型MOSFET | 690mW | 3.5 ns | 2 N-Channel (Dual) | SWITCHING | 350m Ω @ 1.2A, 10V | 4V @ 250μA | 70pF @ 50V | 2nC @ 10V | 1.7ns | 100V | 2.3 ns | 1.2A | 3.2V | MO-193AA | 20V | 0.35Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 5 pF | 1.1mm | 3mm | 1.7mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMG1023UV-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | 28.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 750mOhm | Matte Tin (Sn) | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | 530mW | FLAT | 260 | DMG1023UV | 6 | Dual | 增强型MOSFET | 530mW | 5.1 ns | 2 P-Channel (Dual) | SWITCHING | 750m Ω @ 430mA, 4.5V | 1V @ 250μA | 59.76pF @ 16V | 0.62nC @ 4.5V | 8.1ns | 20V | 20.7 ns | 1.03A | -1V | 6V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | AO8810 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | 不用于新设计 | 1 (Unlimited) | 8 | 1.5W | 鸥翼 | 未说明 | 未说明 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) Common Drain | SWITCHING | 20m Ω @ 7A, 4.5V | 1.1V @ 250μA | 1295pF @ 10V | 14nC @ 4.5V | 20V | 7A | 7A | 0.0205Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO6804A | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 6 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | 1.3W | 1.3W | 2 N-Channel (Dual) Common Drain | 28m Ω @ 5A, 4.5V | 1V @ 250μA | 225pF @ 10V | 7.5nC @ 4.5V | 20V | 5A | 12V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3664S | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 171mg | SILICON | 13A 25A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | FLAT | R-PDSO-F6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 7.7 ns | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 1765pF @ 15V | 29nC @ 10V | 25A | 12V | 13A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 70 pF | 1.1mm | 5mm | 5.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG1024UV-7 | Diodes Incorporated | 数据表 | 1112 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | 26.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 10Ohm | Matte Tin (Sn) | 低阈值 | 530mW | FLAT | 260 | 40 | DMG1024UV | 6 | Dual | 增强型MOSFET | 530mW | 5.1 ns | 2 N-Channel (Dual) | SWITCHING | 450m Ω @ 600mA, 4.5V | 1V @ 250μA | 60.67pF @ 16V | 0.74nC @ 4.5V | 7.4ns | 20V | 12.3 ns | 1.38A | 6V | 1.39A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | CSD88537NDT | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 15A | 2 | 5 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 雪崩 额定 | 2.1W | 鸥翼 | 260 | 未说明 | CSD88537 | 2 | Dual | 增强型MOSFET | 2.1W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 8A, 10V | 3.6V @ 250μA | 1400pF @ 30V | 18nC @ 10V | 15ns | 19 ns | 8A | 3V | 20V | 8A | 0.019Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
NTLUD3A50PZTAG | ON Semiconductor | 数据表 | 41370 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 6-UDFN Exposed Pad | YES | 6 | 2 | 39 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 500mW | 6 | Dual | 1.4W | 7 ns | 2 P-Channel (Dual) | 50m Ω @ 4A, 4.5V | 1V @ 250μA | 920pF @ 15V | 10.4nC @ 4.5V | 20V | 2.8A | 8V | 4.4A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 500μm | 2mm | 2mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N10S4L22AATMA1 | Infineon Technologies | 数据表 | 229 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | SILICON | 2 | 30 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 60W | FLAT | 未说明 | not_compliant | 未说明 | AEC-Q101 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 5 ns | 60W | 2 N-Channel (Dual) | 22m Ω @ 17A, 10V | 2.1V @ 25μA | 无卤素 | 1755pF @ 25V | 27nC @ 10V | 3ns | 18 ns | 20A | 16V | 100V | 0.022Ohm | 130 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
FDMS3604S | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 171mg | SILICON | 13A 23A | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N6 | 不合格 | Single | 增强型MOSFET | 排水源头 | 13 ns | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 1785pF @ 15V | 29nC @ 10V | 4.8ns | 3.4 ns | 23A | 20V | 13A | 30V | 40A | 40 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87588N | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 5-XFLGA | 5 | 25A | 20.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | EAR99 | 6W | BOTTOM | 无铅 | 260 | 1 | 未说明 | CSD87588 | 开关稳压器 | Dual | 2 N-Channel (Half Bridge) | 9.6m Ω @ 15A, 10V | 1.9V @ 250μA | 脉宽调制 | 736pF @ 15V | 4.1nC @ 4.5V | 36.7ns | 6.3 ns | 15A | 20V | 30V | 逻辑电平门 | 0.4mm | 5mm | 2.5mm | 400μm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP3028LSD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.3W | 260 | 30 | 1.3W | 2 P-Channel (Dual) | 25m Ω @ 7A, 10V | 3V @ 250μA | 1241pF @ 15V | 10.9nC @ 10V | 30V | 6A | 6A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5485NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 8 | 27.8 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | 不用于新设计 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2.9W | 8 | 2 | Dual | 9.5 ns | 2 N-Channel (Dual) | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 无卤素 | 560pF @ 25V | 20nC @ 10V | 26.6ns | 60V | 23.7 ns | 5.3A | 20V | 60V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP4025LSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 6.9A | 2 | 53.7 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8W | 鸥翼 | 260 | 40 | DMP4025LSD | 增强型MOSFET | 1.8W | 6.9 ns | 2 P-Channel (Dual) | SWITCHING | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 1640pF @ 20V | 33.7nC @ 10V | 14.7ns | 40V | 30.9 ns | -7.6A | -1.3V | 20V | 0.045Ohm | -40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
AO4614B | Alpha & Omega Semiconductor Inc. | 数据表 | 30 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 6A 5A | 2 | -55°C~150°C TJ | Cut Tape (CT) | 1999 | 活跃 | 1 (Unlimited) | 2W | 2W | N and P-Channel | 30m Ω @ 6A, 10V | 3V @ 250μA | 650pF @ 20V | 10.8nC @ 10V | 40V | 5A | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMD5838NLR2G | ON Semiconductor | 数据表 | 14168 In Stock | - | 最小起订量: 1 最小包装量: 1 | 52 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.1W | 鸥翼 | 8 | Dual | 增强型MOSFET | 2.1W | 11 ns | 2 N-Channel (Dual) | 25m Ω @ 7A, 10V | 3V @ 250μA | 785pF @ 20V | 17nC @ 10V | 23ns | 40V | 4 ns | 7.4A | 1.8V | 20V | 40V | 35A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7379TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.8A 4.3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 2.5W | DUAL | 鸥翼 | 5.8A | IRF7379PBF | 增强型MOSFET | 2.5W | N and P-Channel | SWITCHING | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | N-CHANNEL AND P-CHANNEL | 5.8A | 20V | 0.045Ohm | 30V | 46A | METAL-OXIDE SEMICONDUCTOR | Standard | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3660S | ON Semiconductor | 数据表 | 665 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 171mg | SILICON | 30A 60A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2.5W | FLAT | FDMS3660S | R-PDSO-F6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 7.7 ns | 1W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 1765pF @ 15V | 29nC @ 10V | 30A | 1.5V | 12V | 13A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 70 pF | 1.1mm | 5mm | 5.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S412ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-PowerVDFN | 8 | PG-TDSON-8-4 | 20A | 10 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 41W | Dual | 41W | 9 ns | 41W | 2 N-Channel (Dual) | 12.2mOhm @ 17A, 10V | 4V @ 15μA | 无卤素 | 1470pF @ 25V | 18nC @ 10V | 2ns | 40V | 8 ns | 20A | 20V | 40V | 40V | 1.13nF | Standard | 12.2mOhm | 12.2 mΩ | 1mm | 5.15mm | 6.15mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG1024NZ | ON Semiconductor | 数据表 | 41332 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 360mW | 鸥翼 | 未说明 | 未说明 | 不合格 | Dual | 增强型MOSFET | 360mW | 3.7 ns | 300mW | 2 N-Channel (Dual) | SWITCHING | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | 150pF @ 10V | 2.6nC @ 4.5V | 1.7ns | 20V | 1.5 ns | 1.2A | 800mV | 8V | 0.175Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 1mm | 2mm | 1.25mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
NTMD4820NR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 4.9A | 21 ns | 1 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.29W | 鸥翼 | NTMD4820N | 8 | Dual | 增强型MOSFET | 1.28W | 9.4 ns | 750mW | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 7.5A, 10V | 3V @ 250μA | 940pF @ 15V | 7.7nC @ 4.5V | 4ns | 4 ns | 6.4A | 20V | 4.9A | 0.02Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | 无铅 |
IRLHS6276TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMP3056LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.966949
BSG0811NDATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
13.000473
DMN2028UFDH-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.953310
FDC8602
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMG1023UV-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.709996
AO8810
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AO6804A
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FDMS3664S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMG1024UV-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
CSD88537NDT
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
NTLUD3A50PZTAG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
4.919793
IPG20N10S4L22AATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FDMS3604S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
CSD87588N
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
DMP3028LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.254155
NVMFD5485NLWFT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMP4025LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
AO4614B
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
2.897758
NTMD5838NLR2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF7379TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FDMS3660S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IPG20N04S412ATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FDG1024NZ
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTMD4820NR2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
